发明授权
US08329551B2 Semiconductor device substrate with embedded stress region, and related fabrication methods
有权
具有嵌入应力区域的半导体器件基板及相关制造方法
- 专利标题： Semiconductor device substrate with embedded stress region, and related fabrication methods
- 专利标题（中）： 具有嵌入应力区域的半导体器件基板及相关制造方法
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申请号： US12947460申请日： 2010-11-16
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公开(公告)号： US08329551B2公开(公告)日： 2012-12-11
- 发明人: Stefan Flachowsky , Jan Hoentschel , Thilo Scheiper
- 申请人： Stefan Flachowsky , Jan Hoentschel , Thilo Scheiper
- 申请人地址： KY Grand Cayman
- 专利权人： Globalfoundries, Inc.
- 当前专利权人： Globalfoundries, Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device substrate is presented here. The semiconductor device substrate includes a layer of first semiconductor material having a first lattice constant, a region of second semiconductor material located in the layer of first semiconductor material, and a layer of epitaxially grown third semiconductor material overlying the layer of first semiconductor material and overlying the region of second semiconductor material. The second semiconductor material has a second lattice constant that is different than the first lattice constant. Moreover, the layer of epitaxially grown third semiconductor material exhibits a stressed zone overlying the region of second semiconductor material. The stressed zone has a third lattice constant that is different than the first lattice constant.
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