发明授权
- 专利标题： Method of manufacturing semiconductor device
- 专利标题（中）： 制造半导体器件的方法
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申请号： US13076660申请日： 2011-03-31
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公开(公告)号： US08329570B2公开(公告)日： 2012-12-11
- 发明人: Masahiro Fukuda , Ken Sugimoto , Masatoshi Nishikawa
- 申请人： Masahiro Fukuda , Ken Sugimoto , Masatoshi Nishikawa
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2010-090771 20100409
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/4763
摘要：
A method of manufacturing a semiconductor device, comprising, forming a first gate electrode in a first region of a semiconductor substrate and forming a second gate electrode in a second region of the semiconductor substrate, forming a first sidewall along a lateral wall of the first gate electrode and forming a second sidewall along a lateral wall of the second gate electrode, forming an oxide film to cover the semiconductor substrate, the first gate electrode, the second gate electrode, the first sidewall and the second sidewall, forming a resist above the oxide film to cover the first region, removing the oxide film in the second region by etching the oxide film with the resist serving as a mask, removing the resist, and executing a plasma process by using a gas containing chlorine with respect to the semiconductor substrate and the oxide film in the first region.
公开/授权文献
- US20110250748A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 公开/授权日：2011-10-13
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