发明授权
- 专利标题: Methods of fabricating flash memory devices having shared sub active regions
- 专利标题(中): 制造具有共享子有源区的闪存器件的方法
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申请号: US13230978申请日: 2011-09-13
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公开(公告)号: US08329574B2公开(公告)日: 2012-12-11
- 发明人: Jong-Sun Sel , Jung-Dal Choi
- 申请人: Jong-Sun Sel , Jung-Dal Choi
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2005-0093131 20051004
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
Flash memory devices include a pair of elongated, closely spaced-apart main active regions in a substrate. A sub active region is also provided in the substrate, extending between the pair of elongated, closely spaced-apart main active regions. A bit line contact plug is provided on, and electrically contacting, the sub active region and being at least as wide as the sub active region. An elongated bit line is provided on, and electrically contacting, the bit line contact plug remote from the sub active region.