发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12650419申请日： 2009-12-30
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公开(公告)号： US08329582B2公开(公告)日： 2012-12-11
- 发明人: Tae Kyung Kim
- 申请人： Tae Kyung Kim
- 申请人地址： KR Icheon-si
- 专利权人： Hynix Semiconductor Inc.
- 当前专利权人： Hynix Semiconductor Inc.
- 当前专利权人地址： KR Icheon-si
- 代理机构： Marshall, Gerstein & Borun LLP
- 优先权： KR10-2009-0010598 20090210
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A semiconductor device comprises insulating layer including damascene patterns and formed over a semiconductor substrate, conductive line formed higher than the insulating layer within the respective damascene patterns, and interference-prevention grooves formed within the damascene patterns between sidewalls of the conductive line and the insulating layer.
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