发明授权
- 专利标题： Substrate for semiconductor device including an island-shaped underlying film overlapping a transistor, method of manufacturing the same, semiconductor device and electronic device
- 专利标题（中）： 用于半导体器件的衬底，包括与晶体管重叠的岛状下面的膜，其制造方法，半导体器件和电子器件
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申请号： US12941258申请日： 2010-11-08
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公开(公告)号： US08330194B2公开(公告)日： 2012-12-11
- 发明人: Takashi Sato
- 申请人： Takashi Sato
- 申请人地址： JP Tokyo
- 专利权人： Seiko Epson Corporation
- 当前专利权人： Seiko Epson Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： AdvantEdge Law Group, LLC
- 优先权： JP2009-259954 20091113
- 主分类号： H01L31/062
- IPC分类号： H01L31/062
摘要：
A substrate for a semiconductor device is provided, including: a substrate; a transistor, formed on the substrate, that includes a semiconductor layer, and a gate electrode disposed so as to be opposed to the semiconductor layer with a gate insulating film interposed therebetween; and an underlying film disposed below the semiconductor layer, as an underlayer of the transistor, and formed in an island shape so as to at least partially overlap the semiconductor layer, in a plan view of the substrate.
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