发明授权
- 专利标题： Non-volatile NAND memory semiconductor integrated circuit
- 专利标题（中）： 非易失性NAND存储器半导体集成电路
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申请号： US13164946申请日： 2011-06-21
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公开(公告)号： US08330204B2公开(公告)日： 2012-12-11
- 发明人: Toshitake Yaegashi , Yoshio Ozawa
- 申请人： Toshitake Yaegashi , Yoshio Ozawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2004-242558 20040823
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first insulating film which has concave portions between the first and second gate electrodes and does not contain nitrogen as a main component, a second insulating film which is formed on the first insulating film and does not contain nitrogen as a main component, and a third insulating film formed on the first diffusion layers, first gate electrodes, second diffusion layers and second gate electrodes with the second insulating film disposed therebetween in a partial region. The second insulating film is formed to fill the concave portions and a portion between the first and second gate electrodes has a multi-layered structure containing at least the first and second insulating films.
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