发明授权
US08330205B2 Nonvolatile semiconductor device including a floating gate and associated systems
有权
包括浮动栅极和相关系统的非易失性半导体器件
- 专利标题： Nonvolatile semiconductor device including a floating gate and associated systems
- 专利标题（中）： 包括浮动栅极和相关系统的非易失性半导体器件
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申请号： US13040380申请日： 2011-03-04
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公开(公告)号： US08330205B2公开(公告)日： 2012-12-11
- 发明人: Se-Hoon Lee , Donghoon Jang , Jong Jin Lee , Jeong-Dong Choe
- 申请人： Se-Hoon Lee , Donghoon Jang , Jong Jin Lee , Jeong-Dong Choe
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR2007-42051 20070430
- 主分类号： H01L29/788
- IPC分类号： H01L29/788
摘要：
A memory device includes a first floating gate electrode on a substrate between adjacent isolation layers in the substrate, at least a portion of the first floating gate protruding above a portion of the adjacent isolation layers, a second floating gate electrode, electrically connected to the first floating gate electrode, on at least one of the adjacent isolation layers, a dielectric layer over the first and second floating gate electrodes, and a control gate over the dielectric layer and the first and second floating gate electrodes.
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