发明授权
- 专利标题: Non-volatile semiconductor memory device and method of manufacturing the same
- 专利标题(中): 非易失性半导体存储器件及其制造方法
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申请号: US12345088申请日: 2008-12-29
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公开(公告)号: US08330216B2公开(公告)日: 2012-12-11
- 发明人: Yosuke Komori , Masaru Kito , Megumi Ishiduki , Ryota Katsumata , Hiroyasu Tanaka , Masaru Kidoh , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
- 申请人: Yosuke Komori , Masaru Kito , Megumi Ishiduki , Ryota Katsumata , Hiroyasu Tanaka , Masaru Kidoh , Yoshiaki Fukuzumi , Hideaki Aochi , Yasuyuki Matsuoka
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-1681 20080108
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A non-volatile semiconductor memory device includes a first columnar semiconductor layer and a plurality of first conductive layers formed such that a charge storage layer for storing charges is sandwiched between the first conductive layers and the first columnar semiconductor layer. Also, the non-volatile semiconductor memory device includes a second columnar semiconductor layer and a second conductive layer formed such that an insulating layer is sandwiched between the second conductive layer and the second columnar semiconductor layer, the second conductive layer being repeatedly provided in a line form by providing a certain interval in a first direction perpendicular to a laminating direction. A first sidewall conductive layer being in contact with the second conductive layer and extending in the first direction is formed on a sidewall along a longitudinal direction of the second conductive layer.