发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12647639申请日: 2009-12-28
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公开(公告)号: US08330254B2公开(公告)日: 2012-12-11
- 发明人: Masayuki Furumiya , Hiroaki Ohkubo , Fuyuki Okamoto , Masayuki Mizuno , Koichi Nose , Yoshihiro Nakagawa , Yoshio Kameda
- 申请人: Masayuki Furumiya , Hiroaki Ohkubo , Fuyuki Okamoto , Masayuki Mizuno , Koichi Nose , Yoshihiro Nakagawa , Yoshio Kameda
- 申请人地址: JP Kanagawa JP Tokyo
- 专利权人: Renesas Electronics Corporation,NEC Corporation
- 当前专利权人: Renesas Electronics Corporation,NEC Corporation
- 当前专利权人地址: JP Kanagawa JP Tokyo
- 代理机构: Young & Thompson
- 优先权: JP2008-333090 20081226
- 主分类号: H01L23/544
- IPC分类号: H01L23/544
摘要:
A semiconductor device includes a semiconductor wafer in which semiconductor chip forming regions and a scribe region located between the semiconductor chip forming regions are formed, a plurality of semiconductor chip circuit portions provided over the semiconductor wafer, a plurality of first conductive layers, provided in each of the semiconductor chip forming regions, which is electrically connected to each of the circuit portions, and a first connecting portion that electrically connects the first conductive layers to each other across a portion of the scribe region. An external power supply or grounding pad is connected to any one of the first conductive layer and the first connecting portion. The semiconductor device includes a communication portion, connected to the circuit portion, which performs communication with the outside by capacitive coupling or inductive coupling.
公开/授权文献
- US20100164053A1 SEMICONDUCTOR DEVICE 公开/授权日:2010-07-01