Invention Grant
- Patent Title: Germanium MOSFET devices and methods for making same
- Patent Title (中): 锗MOSFET器件及其制造方法
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Application No.: US12836378Application Date: 2010-07-14
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Publication No.: US08334181B1Publication Date: 2012-12-18
- Inventor: Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
- Applicant: Judy Xilin An , Zoran Krivokapic , Haihong Wang , Bin Yu
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A double gate germanium metal-oxide semiconductor field-effect transistor (MOSFET) includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, and a second gate formed adjacent a second side of the germanium fin opposite the first side. A triple gate MOSFET includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, a second gate formed adjacent a second side of the germanium fin opposite the first side, and a top gate formed on top of the germanium fin. An all-around gate MOSFET includes a germanium fin, a first sidewall gate structure formed adjacent a first side of the germanium fin, a second sidewall gate structure formed adjacent a second side of the germanium fin, and additional gate structures formed on and around the germanium fin.
Information query
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