发明授权
- 专利标题： Process for manufacturing a wafer by annealing of buried channels
- 专利标题（中）： 掩埋通道退火制造晶圆的工艺
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申请号： US12791553申请日： 2010-06-01
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公开(公告)号： US08334188B2公开(公告)日： 2012-12-18
- 发明人: Flavio Villa , Gabriele Barlocchi , Pietro Corona
- 申请人： Flavio Villa , Gabriele Barlocchi , Pietro Corona
- 申请人地址： IT Agrate Brianza
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza
- 代理机构： Graybeal Jackson LLP
- 优先权： EP01830820 20011228
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A process for manufacturing an SOI wafer, including the steps of: forming, in a wafer of semiconductor material, cavities delimiting structures of semiconductor material; thinning out the structures through a thermal process; and completely oxidizing the structures.
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