发明授权
US08335059B2 Tunneling magnetoresistive effect element and spin MOS field-effect
有权
隧道磁阻效应元件和自旋MOS场效应晶体管
- 专利标题： Tunneling magnetoresistive effect element and spin MOS field-effect
- 专利标题（中）： 隧道磁阻效应元件和自旋MOS场效应晶体管
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申请号： US13533198申请日： 2012-06-26
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公开(公告)号： US08335059B2公开(公告)日： 2012-12-18
- 发明人: Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- 申请人： Mizue Ishikawa , Yoshiaki Saito , Hideyuki Sugiyama , Tomoaki Inokuchi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2008-005041 20080111
- 主分类号： G11B5/39
- IPC分类号： G11B5/39 ; H01L21/02 ; H01L29/82
摘要：
A magnetoresistive effect element includes a first ferromagnetic layer, Cr layer, Heusler alloy layer, barrier layer, and second ferromagnetic layer. The first ferromagnetic layer has the body-centered cubic lattice structure. The Cr layer is formed on the first ferromagnetic layer and has the body-centered cubic lattice structure. The Heusler alloy layer is formed on the Cr layer. The barrier layer is formed on the Heusler alloy layer. The second ferromagnetic layer is formed on the barrier layer.
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