发明授权
US08335106B2 Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
失效
超晶格器件及其制造方法，包括超晶格器件，数据处理系统和数据处理器件的固态存储器
- 专利标题： Superlattice device, manufacturing method thereof, solid-state memory including superlattice device, data processing system, and data processing device
- 专利标题（中）： 超晶格器件及其制造方法，包括超晶格器件，数据处理系统和数据处理器件的固态存储器
-
申请号： US12772340申请日： 2010-05-03
-
公开(公告)号： US08335106B2公开(公告)日： 2012-12-18
- 发明人: Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
- 申请人： Kazuo Aizawa , Isamu Asano , Junji Tominaga , Alexander Kolobov , Paul Fons , Robert Simpson
- 申请人地址： JP Tokyo
- 专利权人： Elpida Memory, Inc.
- 当前专利权人： Elpida Memory, Inc.
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2009-113994 20090508
- 主分类号： G11C11/34
- IPC分类号： G11C11/34
摘要：
To include a superlattice laminate having laminated thereon a first crystal layer of which crystal lattice is a cubic crystal and in which positions of constituent atoms are reversibly replaced by application of energy, and a second crystal layer having a composition different from that of the first crystal layer, and an orientation layer that is an underlaying layer of the superlattice laminate and causes a laminated surface of the first crystal layer to be (111)-orientated. According to the present invention, the laminated surface of the first crystal layer can be (111)-orientated by using the orientation layer as an underlaying layer. In the first crystal layer of which laminated surface is (111)-orientated, a crystal structure reversibly changes when a relatively low energy is applied. Therefore, characteristics of a superlattice device having this crystal layer can be enhanced.
公开/授权文献
信息查询
