Invention Grant
US08335115B2 Semiconductor memory module and semiconductor memory system having termination resistor units
有权
具有终端电阻器单元的半导体存储器模块和半导体存储器系统
- Patent Title: Semiconductor memory module and semiconductor memory system having termination resistor units
- Patent Title (中): 具有终端电阻器单元的半导体存储器模块和半导体存储器系统
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Application No.: US12781936Application Date: 2010-05-18
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Publication No.: US08335115B2Publication Date: 2012-12-18
- Inventor: Jung-bae Lee
- Applicant: Jung-bae Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0044135 20090520
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A semiconductor memory module includes a memory module board having at least one semiconductor memory device, an advanced memory buffer (AMB) for receiving the data and the command/address signal from a host and providing the data and the command/address signal to the at least one semiconductor memory device, and a second termination resistor unit located on the memory module board and electrically connected to the AMB. The at least one semiconductor memory device includes a data input buffer for receiving data via a first input terminal and receiving a first reference voltage via a second input terminal, a command/address input buffer for receiving a command/address signal via a first input terminal and receiving a second reference voltage via a second input terminal, and a first termination resistor unit connected to the first input terminal of the data input buffer.
Public/Granted literature
- US20100226185A1 SEMICONDUCTOR MEMORY MODULE AND SEMICONDUCTOR MEMORY SYSTEM HAVING TERMINATION RESISTOR UNITS Public/Granted day:2010-09-09
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