Invention Grant
US08335115B2 Semiconductor memory module and semiconductor memory system having termination resistor units 有权
具有终端电阻器单元的半导体存储器模块和半导体存储器系统

  • Patent Title: Semiconductor memory module and semiconductor memory system having termination resistor units
  • Patent Title (中): 具有终端电阻器单元的半导体存储器模块和半导体存储器系统
  • Application No.: US12781936
    Application Date: 2010-05-18
  • Publication No.: US08335115B2
    Publication Date: 2012-12-18
  • Inventor: Jung-bae Lee
  • Applicant: Jung-bae Lee
  • Applicant Address: KR Suwon-si, Gyeonggi-do
  • Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee: Samsung Electronics Co., Ltd.
  • Current Assignee Address: KR Suwon-si, Gyeonggi-do
  • Agency: Volentine & Whitt, PLLC
  • Priority: KR10-2009-0044135 20090520
  • Main IPC: G11C7/10
  • IPC: G11C7/10
Semiconductor memory module and semiconductor memory system having termination resistor units
Abstract:
A semiconductor memory module includes a memory module board having at least one semiconductor memory device, an advanced memory buffer (AMB) for receiving the data and the command/address signal from a host and providing the data and the command/address signal to the at least one semiconductor memory device, and a second termination resistor unit located on the memory module board and electrically connected to the AMB. The at least one semiconductor memory device includes a data input buffer for receiving data via a first input terminal and receiving a first reference voltage via a second input terminal, a command/address input buffer for receiving a command/address signal via a first input terminal and receiving a second reference voltage via a second input terminal, and a first termination resistor unit connected to the first input terminal of the data input buffer.
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