Invention Grant
- Patent Title: IC design flow enhancement with CMP simulation
- Patent Title (中): IC设计流程增强与CMP模拟
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Application No.: US11688654Application Date: 2007-03-20
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Publication No.: US08336002B2Publication Date: 2012-12-18
- Inventor: Gwan Sin Chang , Yi-Kan Cheng , Ivy Chiu , Ke-Ying Su
- Applicant: Gwan Sin Chang , Yi-Kan Cheng , Ivy Chiu , Ke-Ying Su
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An integrated circuit (IC) design method includes providing IC design layout data; simulating a chemical mechanical polishing (CMP) process to a material layer based on the IC design layout, to generate various geometrical parameters; extracting resistance and capacitance based on the various geometrical parameters from the simulating of the CMP process; and performing circuit timing analysis based on the extracted resistance and capacitance.
Public/Granted literature
- US20070266356A1 IC Design Flow Enhancement With CMP Simulation Public/Granted day:2007-11-15
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