发明授权
US08338302B2 Method for polishing a semiconductor wafer with a strained-relaxed Si1−xGex layer
有权
用应变松弛Si1-xGex层研磨半导体晶片的方法
- 专利标题： Method for polishing a semiconductor wafer with a strained-relaxed Si1−xGex layer
- 专利标题（中）： 用应变松弛Si1-xGex层研磨半导体晶片的方法
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申请号： US12610399申请日： 2009-11-02
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公开(公告)号： US08338302B2公开(公告)日： 2012-12-25
- 发明人: Juergen Schwandner , Roland Koppert
- 申请人： Juergen Schwandner , Roland Koppert
- 申请人地址： DE Munich
- 专利权人： Siltronic AG
- 当前专利权人： Siltronic AG
- 当前专利权人地址： DE Munich
- 代理机构： Brooks Kushman P.C.
- 优先权： DE102008059044 20081126
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
Semiconductor wafer provided with a strain-relaxed layer of Si1-xGex, are polished in a first step of mechanical machining of the Si1-xGex layer of the semiconductor wafer in a polishing machine using a polishing pad containing fixedly bonded abrasive materials having a particle size of 0.55 μm or less, and also a second step of a chemomechanical machining of the previously mechanically machined Si1-xGex layer of the semiconductor wafer using a polishing pad and with supply of a polishing agent slurry containing abrasive materials.
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