发明授权
- 专利标题： Simplified pitch doubling process flow
- 专利标题（中）： 简化俯仰加倍流程
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申请号： US13229898申请日： 2011-09-12
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公开(公告)号： US08338959B2公开(公告)日： 2012-12-25
- 发明人: Ardavan Niroomand , Baosuo Zhou , Ramakanth Alapati
- 申请人： Ardavan Niroomand , Baosuo Zhou , Ramakanth Alapati
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Knobbe, Martens, Olson & Bear LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
公开/授权文献
- US20110316114A1 SIMPLIFIED PITCH DOUBLING PROCESS FLOW 公开/授权日：2011-12-29
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