Invention Grant
US08343306B2 Plasma processing apparatus and method of plasma distribution correction
有权
等离子体处理装置及等离子体分布校正方法
- Patent Title: Plasma processing apparatus and method of plasma distribution correction
- Patent Title (中): 等离子体处理装置及等离子体分布校正方法
-
Application No.: US12046094Application Date: 2008-03-11
-
Publication No.: US08343306B2Publication Date: 2013-01-01
- Inventor: Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
- Applicant: Satoshi Tanaka , Chishio Koshimizu , Manabu Iwata , Naoki Matsumoto , Toru Ito
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-061748 20070312
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C16/00

Abstract:
A plasma processing apparatus can prevent a sheath from becoming distorted, simplify a configuration of the apparatus, and prevent particles from attaching to a substrate. The plasma processing apparatus performs plasma processing on the substrate. A housing chamber houses the substrate. A mounting stage is disposed within the housing chamber and mounted with the substrate. An annular member is disposed in the mounting stage. A power supply unit supplies high-frequency power to the mounting stage. An observation unit optically observes the distribution of the plasma. A voltage applying unit applies a DC voltage to the annular member. A control unit sets the value of the DC voltage to be applied based on the observed plasma distribution.
Public/Granted literature
- US20090026170A1 PLASMA PROCESSING APPARATUS AND METHOD OF PLASMA DISTRIBUTION CORRECTION Public/Granted day:2009-01-29
Information query
IPC分类: