发明授权
US08343694B2 Photomask blank, resist pattern forming process, and photomask preparation process
有权
光掩模坯料，抗蚀剂图案形成工艺和光掩模制备工艺
- 专利标题： Photomask blank, resist pattern forming process, and photomask preparation process
- 专利标题（中）： 光掩模坯料，抗蚀剂图案形成工艺和光掩模制备工艺
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申请号： US13207764申请日： 2011-08-11
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公开(公告)号： US08343694B2公开(公告)日： 2013-01-01
- 发明人: Ryuji Koitabashi , Satoshi Watanabe , Takanobu Takeda , Keiichi Masunaga , Tamotsu Watanabe
- 申请人： Ryuji Koitabashi , Satoshi Watanabe , Takanobu Takeda , Keiichi Masunaga , Tamotsu Watanabe
- 申请人地址： JP Tokyo
- 专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人： Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2007-150130 20070606
- 主分类号： G03F9/00
- IPC分类号： G03F9/00
摘要：
A photomask blank has a resist film comprising (A) a base resin, (B) an acid generator, and (C) a basic compound. The resist film further comprises (D) a polymer comprising recurring units having a side chain having a fluorinated hydrocarbon group which contains a carbon atom to which a hydroxyl group is bonded and vicinal carbon atoms bonded thereto, the vicinal carbon atoms having in total at least two fluorine atoms bonded thereto. Addition of polymer (D) ensures uniform development throughout the resist film, enabling to form a resist pattern having high CD uniformity.
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