发明授权
- 专利标题： Method and structure for dividing a substrate into individual devices
- 专利标题（中）： 将基板分割为各个装置的方法和结构
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申请号： US13095584申请日： 2011-04-27
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公开(公告)号： US08343852B2公开(公告)日： 2013-01-01
- 发明人: Minhua Li , Qi Wang , Gordon Sim , Matthew Reynolds , Suku Kim , James J. Murphy , Hamza Yilmaz
- 申请人： Minhua Li , Qi Wang , Gordon Sim , Matthew Reynolds , Suku Kim , James J. Murphy , Hamza Yilmaz
- 申请人地址： US ME South Portland
- 专利权人： Fairchild Semiconductor Corporation
- 当前专利权人： Fairchild Semiconductor Corporation
- 当前专利权人地址： US ME South Portland
- 主分类号： H01L21/00
- IPC分类号： H01L21/00
摘要：
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.