发明授权
- 专利标题: Ultraviolet sensor
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申请号: US12123849申请日: 2008-05-20
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公开(公告)号: US08344371B2公开(公告)日: 2013-01-01
- 发明人: Kazutaka Nakamura , Yoshihiro Ito
- 申请人: Kazutaka Nakamura , Yoshihiro Ito
- 申请人地址: JP Nagaokakyo-Shi, Kyoto-fu
- 专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人: Murata Manufacturing Co., Ltd.
- 当前专利权人地址: JP Nagaokakyo-Shi, Kyoto-fu
- 代理机构: Dickstein Shapiro LLP
- 优先权: JP2005-338319 20051124
- 主分类号: H01L29/10
- IPC分类号: H01L29/10
摘要:
A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.
公开/授权文献
- US20080217611A1 Ultraviolet Sensor 公开/授权日:2008-09-11