Invention Grant
- Patent Title: Enhancement-mode gallium nitride high electron mobility transistor
- Patent Title (中): 增强型氮化镓高电子迁移率晶体管
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Application No.: US12509144Application Date: 2009-07-24
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Publication No.: US08344420B1Publication Date: 2013-01-01
- Inventor: Jose Jimenez
- Applicant: Jose Jimenez
- Applicant Address: US OR Hillsboro
- Assignee: TriQuint Semiconductor, Inc.
- Current Assignee: TriQuint Semiconductor, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Schwabe Williamson & Wyatt
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Embodiments include but are not limited to apparatuses and systems including a heterostructure having a first barrier layer, a gallium nitride channel layer on the first barrier layer, and a second barrier layer on the gallium nitride channel layer and including a first sublayer, a second sublayer, and a third sublayer. The first barrier layer, the first sublayer, and the third sublayer may each include aluminum. Other embodiments may be described and claimed.
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