发明授权
US08345389B2 Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element
有权
使用Au和CuNi的珀耳帖效应结的磁阻元件来冷却元件
- 专利标题： Magnetoresistive element utilizing a peltier effect junction of Au and CuNi to cool the element
- 专利标题（中）： 使用Au和CuNi的珀耳帖效应结的磁阻元件来冷却元件
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申请号： US12879376申请日： 2010-09-10
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公开(公告)号： US08345389B2公开(公告)日： 2013-01-01
- 发明人: Hiromi Yuasa , Shuichi Murakami , Yoshihiko Fuji , Hideaki Fukuzawa
- 申请人： Hiromi Yuasa , Shuichi Murakami , Yoshihiko Fuji , Hideaki Fukuzawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-065226 20100319
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive element includes a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic layer, a first metal layer, a second metal layer, a first electrode, and a second electrode. The nonmagnetic layer is provided between the first ferromagnetic layer and the second ferromagnetic layer. The first metal layer includes Au and is provided so that the first ferromagnetic layer is sandwiched between the nonmagnetic layer and the first metal layer. The second metal layer includes a CuNi alloy, and is provided so that the first metal layer is sandwiched between the first ferromagnetic layer and the second metal layer. In addition, magnetization of either one of the first ferromagnetic layer and the second ferromagnetic layer is fixed in a direction. Magnetization of the other is variable in response to an external field. At least one of the first ferromagnetic layer and the second ferromagnetic layer includes a half metal.
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