Invention Grant
US08346026B2 Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device
失效
光电器件采用PN二极管和硅集成电路（IC），包括光电器件
- Patent Title: Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device
- Patent Title (中): 光电器件采用PN二极管和硅集成电路（IC），包括光电器件
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Application No.: US12517802Application Date: 2007-08-07
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Publication No.: US08346026B2Publication Date: 2013-01-01
- Inventor: Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
- Applicant: Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Priority: KR10-2006-0122568 20061205
- International Application: PCT/KR2007/003791 WO 20070807
- International Announcement: WO2008/069400 WO 20080612
- Main IPC: G02F1/035
- IPC: G02F1/035 ; G02B6/12 ; G02B6/00
Abstract:
Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
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