Invention Grant
- Patent Title: Method for testing semiconductor film, semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体膜测试方法,半导体器件及其制造方法
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Application No.: US10808499Application Date: 2004-03-25
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Publication No.: US08346497B2Publication Date: 2013-01-01
- Inventor: Hidekazu Miyairi , Hideyuki Ebine
- Applicant: Hidekazu Miyairi , Hideyuki Ebine
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2003-085096 20030326
- Main IPC: G01N21/00
- IPC: G01N21/00

Abstract:
The invention provides a method for testing a semiconductor film, a manufacturing method of a semiconductor film, a laser crystallization method, a laser crystallization device, and a laser crystallization system, for testing a laser crystallized semiconductor film, which require less time, have sufficient reliability, are excellent in cost management and applicable to mass production. In the method for testing a semiconductor film having an improved crystallinity by irradiating an energy light, the tested semiconductor film is photographed in a dark field digital image and then the luminance of the digital image is calculated by a computer in a constant direction for testing.
Public/Granted literature
- US20040254769A1 Method for testing semiconductor film, semiconductor device and manufacturing method thereof Public/Granted day:2004-12-16
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