Invention Grant
US08347116B2 Semiconductor device having multi access level and access control method thereof
有权
具有多路访问级别及其访问控制方法的半导体器件
- Patent Title: Semiconductor device having multi access level and access control method thereof
- Patent Title (中): 具有多路访问级别及其访问控制方法的半导体器件
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Application No.: US12796110Application Date: 2010-06-08
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Publication No.: US08347116B2Publication Date: 2013-01-01
- Inventor: Yun-Ho Youm , Heonsoo Lee , Mijung Noh , Jaechul Park
- Applicant: Yun-Ho Youm , Heonsoo Lee , Mijung Noh , Jaechul Park
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2009-0057179 20090625
- Main IPC: G06F12/14
- IPC: G06F12/14 ; G06F12/00

Abstract:
An access control method of a semiconductor device includes providing an inputted password as an input of a hash operator; performing a hash operation in the hash operator and outputting a first hash value; controlling the hash operator so that the hash operation is repeatedly performed in the hash operator by providing the first hash value as an input of the hash operator when the first hash value and a second hash value stored in a nonvolatile memory do not coincide; and setting an access level with respect to the inner circuit according to the repetition number of times of the hash operation of the hash operator when the first and second hash values coincide.
Public/Granted literature
- US20100332783A1 SEMICONDUCTOR DEVICE HAVING MULTI ACCESS LEVEL AND ACCESS CONTROL METHOD THEREOF Public/Granted day:2010-12-30
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