Invention Grant
US08347254B2 Combined memories in integrated circuits 有权
集成电路中的组合存储器

Combined memories in integrated circuits
Abstract:
Combined memories in integrated circuits are described, including determining a first requirement for logic blocks, determining a second requirement for memory blocks including a vertical configuration for the memory bocks, and compiling a design for the integrated circuit using the first requirement and the second requirement. The memory blocks may include non-volatile two-terminal cross-point memory arrays. The non-volatile two-terminal cross-point memory arrays can be formed on top of a logic plane. The logic plane can be fabricated in a substrate. The non-volatile two-terminal cross-point memory arrays may be vertically stacked upon one another to form a plurality of memory planes. The memory planes can be portioned into sub-planes. One or more different memory types such as Flash, SRAM, DRAM, and ROM can be emulated by the plurality of memory planes and/or sub-planes. The non-volatile two-terminal cross-point memory arrays can include a plurality of two-terminal memory elements.
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