发明授权
US08347726B2 Free-standing nanowire sensor and methods for forming and using the same
有权
独立的纳米线传感器及其形成和使用方法
- 专利标题： Free-standing nanowire sensor and methods for forming and using the same
- 专利标题（中）： 独立的纳米线传感器及其形成和使用方法
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申请号： US11739853申请日： 2007-04-25
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公开(公告)号： US08347726B2公开(公告)日： 2013-01-08
- 发明人: Nobuhiko P. Kobayashi , Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams
- 申请人： Nobuhiko P. Kobayashi , Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 主分类号： G01B7/00
- IPC分类号： G01B7/00 ; G01L1/04
摘要：
A sensing device includes a nanowire configured to deform upon exposure to a force, and a transducer for converting the deformation into a measurement. The nanowire has two opposed ends; and the transducer is operatively connected to one of the two opposed ends of the nanowire. The other of the two opposed ends of the nanowire is freestanding.
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