Invention Grant
US08347726B2 Free-standing nanowire sensor and methods for forming and using the same
有权
独立的纳米线传感器及其形成和使用方法
- Patent Title: Free-standing nanowire sensor and methods for forming and using the same
- Patent Title (中): 独立的纳米线传感器及其形成和使用方法
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Application No.: US11739853Application Date: 2007-04-25
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Publication No.: US08347726B2Publication Date: 2013-01-08
- Inventor: Nobuhiko P. Kobayashi , Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams
- Applicant: Nobuhiko P. Kobayashi , Shih-Yuan Wang , Alexandre M. Bratkovski , R. Stanley Williams
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G01B7/00
- IPC: G01B7/00 ; G01L1/04
Abstract:
A sensing device includes a nanowire configured to deform upon exposure to a force, and a transducer for converting the deformation into a measurement. The nanowire has two opposed ends; and the transducer is operatively connected to one of the two opposed ends of the nanowire. The other of the two opposed ends of the nanowire is freestanding.
Public/Granted literature
- US20080264185A1 SENSING DEVICE AND METHODS FOR FORMING AND USING THE SAME Public/Granted day:2008-10-30
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