Invention Grant
US08347728B2 Stress detection within an integrated circuit having through silicon vias 有权
通过硅通孔的集成电路中的应力检测

Stress detection within an integrated circuit having through silicon vias
Abstract:
An integrated circuit 2 is formed of multiple wafer layers 4, 6, 8, 10 arranged in a stack and connected with through silicon vias 12. Mechanical strain sensors 26, 28, 30, 32 in the form of ring oscillators are provided proximal to the through silicon vias 12 and detect mechanical strain associated with the through silicon via 12. The measured mechanical strain may be used to dynamically adjust operating parameters of the integrated circuit either as a whole or in regions where the mechanical strain is detected. The operating parameters adjusted can include clock frequency, operating voltage and heat generation.
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