Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
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Application No.: US12023327Application Date: 2008-01-31
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Publication No.: US08349085B2Publication Date: 2013-01-08
- Inventor: Shigeru Tahara , Seiichi Takayama , Morihiro Takanashi
- Applicant: Shigeru Tahara , Seiichi Takayama , Morihiro Takanashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-022330 20070131
- Main IPC: C23C16/458
- IPC: C23C16/458 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22

Abstract:
A substarate processing apparatus capable of reducing the capacity of a space in an internal chamber. The internal chamber is housed in a space in an external chamber. A gas supply unit supplies a process gas into the space in the internal chamber. The space in the external chamber is under a reduced pressure or filled with an inert gas. An enclosure being movable and included in the internal chamber defines the space in the internal chamber with a stage heater included in the internal chamber. When a wafer is transferred in and out by a transfer arm used to transfer the wafer, the enclosure exits out of a motion range within which the transfer arm can move.
Public/Granted literature
- US20080179006A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2008-07-31
Information query
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