Invention Grant
US08349087B2 Semiconductor device manufacturing method, wafer treatment system, and recording medium
有权
半导体器件制造方法，晶片处理系统和记录介质
- Patent Title: Semiconductor device manufacturing method, wafer treatment system, and recording medium
- Patent Title (中): 半导体器件制造方法，晶片处理系统和记录介质
-
Application No.: US12654987Application Date: 2010-01-12
-
Publication No.: US08349087B2Publication Date: 2013-01-08
- Inventor: Hidetaka Nambu , Nobuo Hironaga , Futoshi Ota , Toru Yokoyama , Osamu Sugawara , Ryo Satou , Masato Tamura
- Applicant: Hidetaka Nambu , Nobuo Hironaga , Futoshi Ota , Toru Yokoyama , Osamu Sugawara , Ryo Satou , Masato Tamura
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2009-8102 20090116
- Main IPC: B08B3/12
- IPC: B08B3/12 ; B08B6/00 ; B08B7/00 ; B08B7/02 ; C25F1/00 ; C25F3/30 ; C25F5/00
Abstract:
A semiconductor device manufacturing method includes loading plural dry-etched wafers one by one in a container having a side door so as to be disposed substantially horizontally and in layers vertically therein; and blowing out a purge gas horizontally to those wafers loaded in the container for 30 sec or more after all the subject wafers are loaded in the container while the side door is open.
Public/Granted literature
- US20100184296A1 Semiconductor device manufacturing method, wafer treatment system, and recording medium Public/Granted day:2010-07-22
Information query
IPC分类:
