Invention Grant
- Patent Title: Apparatus for etching edge of wafer
- Patent Title (中): 用于蚀刻晶片边缘的设备
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Application No.: US12710801Application Date: 2010-02-23
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Publication No.: US08349126B2Publication Date: 2013-01-08
- Inventor: Chong-Kwang Chang , Oh-Sang Cho , In-Keun Lee , Hyo-Jeong Kim
- Applicant: Chong-Kwang Chang , Oh-Sang Cho , In-Keun Lee , Hyo-Jeong Kim
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2009-0015412 20090224
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306

Abstract:
An apparatus for etching an edge of a wafer includes a chamber, a chuck disposed inside the chamber upon which the wafer is disposed, a plate spaced apart from the wafer and disposed above the wafer, and an edge ring formed along the edge of the wafer and combined with an outer periphery of the plate, wherein the edge ring comprises a ring base spaced a distance apart from the wafer to form a parallel plane with respect to the wafer, and a first ring protrusion protruding from the ring base to insulate the edge of the wafer from a central region of the wafer.
Public/Granted literature
- US20100212833A1 Apparatus for Etching Edge of Wafer Public/Granted day:2010-08-26
Information query
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