Invention Grant
US08349126B2 Apparatus for etching edge of wafer 有权
用于蚀刻晶片边缘的设备

Apparatus for etching edge of wafer
Abstract:
An apparatus for etching an edge of a wafer includes a chamber, a chuck disposed inside the chamber upon which the wafer is disposed, a plate spaced apart from the wafer and disposed above the wafer, and an edge ring formed along the edge of the wafer and combined with an outer periphery of the plate, wherein the edge ring comprises a ring base spaced a distance apart from the wafer to form a parallel plane with respect to the wafer, and a first ring protrusion protruding from the ring base to insulate the edge of the wafer from a central region of the wafer.
Public/Granted literature
Information query
Patent Agency Ranking
0/0