A method for making nickel silicide nano-wire, the method includes the following steps. Firstly, providing a silicon substrate and a growing device, and the growing device including a reacting room. Secondly, forming a silicon dioxide layer on a surface of the silicon substrate. Thirdly, forming a titanium layer on the silicon dioxide layer. Fourthly, placing the silicon substrate into the reacting room, and heating the reacting room to a temperature of 500˜1000° C. Finally, forming a plurality of nickel cluster onto the surface of the silicon substrate.