According to one embodiment, an electroforming master comprises a patterns of protrusions and recesses formed on one major surface of an Si substrate having two major surfaces, corresponding to information for positioning of a read/write head (a preamble, address, and burst), recording tracks or recording bits. Impurity ions are doped in the surface of this patterns of protrusions and recesses. The impurity ion concentration distribution in the film thickness direction of the Si substrate has a peak in a portion from the patterns of protrusions and recesses surface to a depth of 40 nm in the film thickness direction. The impurity concentration of this peak is 1×1020 to 2×1021 ions/cm3.