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US08349207B2 Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device 有权
半导体器件化学机械抛光和化学机械抛光方法的水分散体

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
Abstract:
A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.
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