Invention Grant
- Patent Title: Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method for semiconductor device
- Patent Title (中): 半导体器件化学机械抛光和化学机械抛光方法的水分散体
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Application No.: US12529545Application Date: 2008-02-20
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Publication No.: US08349207B2Publication Date: 2013-01-08
- Inventor: Taichi Matsumoto , Tomikazu Ueno , Michiaki Andou
- Applicant: Taichi Matsumoto , Tomikazu Ueno , Michiaki Andou
- Applicant Address: JP Tokyo
- Assignee: JSR Corporation
- Current Assignee: JSR Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-078748 20070326
- International Application: PCT/JP2008/052803 WO 20080220
- International Announcement: WO2008/117592 WO 20081002
- Main IPC: C09K13/06
- IPC: C09K13/06

Abstract:
A chemical mechanical polishing aqueous dispersion includes (A) colloidal silica having an average particle size calculated from the specific surface area determined by the BET method of 10 to 60 nm, (B) an organic acid having two or more carboxyl groups and one or more hydroxyl groups in one molecule, and (C) a quaternary ammonium compound shown by the following general formula (1), wherein R1 to R4 individually represent hydrocarbon groups, and M− represents an anion, the chemical mechanical polishing aqueous dispersion having a pH of 3 to 5.
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