Invention Grant
US08349536B2 Dithiane derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
有权
二锡衍生物，聚合物，抗蚀剂组合物以及使用这种抗蚀剂组合物的半导体器件的制造方法
- Patent Title: Dithiane derivative, polymer, resist composition, and method for manufacturing semiconductor device using such resist composition
- Patent Title (中): 二锡衍生物，聚合物，抗蚀剂组合物以及使用这种抗蚀剂组合物的半导体器件的制造方法
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Application No.: US12955462Application Date: 2010-11-29
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Publication No.: US08349536B2Publication Date: 2013-01-08
- Inventor: Koji Nozaki
- Applicant: Koji Nozaki
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: G03F7/004
- IPC: G03F7/004 ; G03F7/00 ; C08F220/38
Abstract:
A dithiane derivative, having a structure expressed by the following general formula 1: where R1 is —H, or —CH3, a polymer containing a monomer unit containing the dithiane derivative, a resist composition containing the polymer, and a method for manufacturing a semiconductor device using the resist composition.
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