Fabricating method of nano-ring structure by nano-lithography

Invention Grant

US08349546B2 Fabricating method of nano-ring structure by nano-lithography 失效

Title translation: 纳米光刻纳米环结构的制备方法

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Patent Title: Fabricating method of nano-ring structure by nano-lithography
Patent Title (中): 纳米光刻纳米环结构的制备方法
Application No.: US12213816

Application Date: 2008-06-25
Publication No.: US08349546B2

Publication Date: 2013-01-08
Inventor: Ming-Nung Lin
Applicant: Ming-Nung Lin
Agency: Bacon & Thomas, PLLC
Main IPC: H01L21/441
IPC: H01L21/441

Abstract:

The present invention is to provide a “fabricating method of nano-ring structure by nano-lithography” for fabricating out a new nano-ring structure in more miniature manner than that of the current fabricating facilities by directly using the current fabricating facilities without any alteration or redesign of the precision so that the number and density of the nano-ring structure in unit area or unit volume can be significantly increased in more evenness manner.

Abstract(Chinese):

本发明是通过纳米光刻技术提供纳米环结构的制造方法，通过直接使用当前的制造设备，而不用任何改变或重新设计，以比当前制造设备更微型的方式制造新的纳米环结构的精度，使得单位面积或单位体积中的纳米环结构的数量和密度可以以更均匀的方式显着增加。

Public/Granted literature

US20090004602A1 Fabricating method of nano-ring structure by nano-lithography Public/Granted day:2009-01-01

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/44	....用H01L21/36至H01L21/428各组不包含的方法或设备在半导体材料上制造电极的
H01L21/441	.....用于电极的导电材料或绝缘材料的沉积