Invention Grant
- Patent Title: Magneto-resistive element
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Application No.: US12361575Application Date: 2009-01-29
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Publication No.: US08349622B2Publication Date: 2013-01-08
- Inventor: Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
- Applicant: Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2005-285054 20050929
- Main IPC: H01L29/72
- IPC: H01L29/72
Abstract:
A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
Public/Granted literature
- US20090166322A1 MAGNETO-RESISTIVE ELEMENT Public/Granted day:2009-07-02
Information query
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