Invention Grant
- Patent Title: Method of sensing a high voltage
- Patent Title (中): 感应高电压的方法
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Application No.: US12853528Application Date: 2010-08-10
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Publication No.: US08349625B2Publication Date: 2013-01-08
- Inventor: Jefferson W. Hall , Mohammed Tanvir Quddus
- Applicant: Jefferson W. Hall , Mohammed Tanvir Quddus
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Roger F. Hightower
- Main IPC: H01L21/66
- IPC: H01L21/66

Abstract:
In one embodiment, a method of sensing a high voltage element includes forming a sense element overlying a semiconductor substrate and configuring the sense element to receive a high voltage having a value that is greater than approximately five volts and responsively form a sense signal having a value that is representative of the value of the high voltage and varies in a continuous manner over an operating range of the high voltage.In one embodiment, the sense signal may be used for one of detecting a line under-voltage condition, detecting a line over-voltage condition, determining input power, limiting input power, power limiting, controlling standby operation, a line feed-forward function for current mode ramp compensation, regulating an output voltage, or detecting an energy transfer state of an energy storage element.
Public/Granted literature
- US20100304511A1 METHOD OF SENSING A HIGH VOLTAGE Public/Granted day:2010-12-02
Information query
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