Invention Grant
US08349633B1 Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
有权
用于减少AlGaN外延膜的位错密度和开裂的氮化铝过渡层
- Patent Title: Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
- Patent Title (中): 用于减少AlGaN外延膜的位错密度和开裂的氮化铝过渡层
-
Application No.: US12471690Application Date: 2009-05-26
-
Publication No.: US08349633B1Publication Date: 2013-01-08
- Inventor: Andrew A. Allerman , Mary H. Crawford , Stephen R. Lee
- Applicant: Andrew A. Allerman , Mary H. Crawford , Stephen R. Lee
- Applicant Address: US NM Albuquerque
- Assignee: Sandia Corporation
- Current Assignee: Sandia Corporation
- Current Assignee Address: US NM Albuquerque
- Agent Carol I. Ashby
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
Information query
IPC分类:
