Invention Grant
- Patent Title: Method for manufacturing image sensor
- Patent Title (中): 图像传感器制造方法
-
Application No.: US12615088Application Date: 2009-11-09
-
Publication No.: US08349639B2Publication Date: 2013-01-08
- Inventor: Ki-Jun Yun
- Applicant: Ki-Jun Yun
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Jiang, PLLC
- Priority: KR10-2008-0111418 20081111
- Main IPC: H01L31/042
- IPC: H01L31/042 ; H01L31/068

Abstract:
A method for manufacturing an image sensor includes forming circuitry including a metal line over a semiconductor substrate, forming a photodiode over the metal line, and forming a contact plug in the photodiode such that the contact plug is connected to the metal line. The forming of the contact plug includes performing a first etch process to etch a portion of the photodiode, and performing a second etch process to expose a portion of the metal line by using a byproduct generated in etching, to form a via hole for the contact plug in the photodiode.
Public/Granted literature
- US20100120189A1 METHOD FOR MANUFACTURING IMAGE SENSOR Public/Granted day:2010-05-13
Information query
IPC分类: