Invention Grant
US08349649B2 Semiconductor device and manufacturing method thereof 有权
半导体装置及其制造方法

Semiconductor device and manufacturing method thereof
Abstract:
A semiconductor device includes a first interposer provided with a first chip first interconnection; a first chip arranged to contact the first interposer in one surface of the first chip; a second interposer arranged to contact the other surface of the first chip and provided with a first chip second interconnection; and a second chip group mounted on the second interposer. The first chip has a circuit forming surface on which a circuit element is formed, as one of the surfaces of the first chip, and the first chip first interconnection and the first chip second interconnection are electrically connected with the circuit element. A through electrode is formed to pass from the one of the surfaces of the first chip to the other surface, and one of the first chip first interconnection and the first chip second interconnection is electrically connected with the circuit element through the through electrode.
Public/Granted literature
Information query
Patent Agency Ranking
0/0