Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12905167Application Date: 2010-10-15
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Publication No.: US08349649B2Publication Date: 2013-01-08
- Inventor: Yoichiro Kurita
- Applicant: Yoichiro Kurita
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-238499 20091015
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/30 ; H01L21/46 ; H01L23/02 ; H01L21/40 ; H01L21/48 ; H01L21/52

Abstract:
A semiconductor device includes a first interposer provided with a first chip first interconnection; a first chip arranged to contact the first interposer in one surface of the first chip; a second interposer arranged to contact the other surface of the first chip and provided with a first chip second interconnection; and a second chip group mounted on the second interposer. The first chip has a circuit forming surface on which a circuit element is formed, as one of the surfaces of the first chip, and the first chip first interconnection and the first chip second interconnection are electrically connected with the circuit element. A through electrode is formed to pass from the one of the surfaces of the first chip to the other surface, and one of the first chip first interconnection and the first chip second interconnection is electrically connected with the circuit element through the through electrode.
Public/Granted literature
- US20110089573A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2011-04-21
Information query
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