Invention Grant
US08349668B2 Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers
有权
使用表面/通道取向和应变封盖层的FinFET的应力增强性能
- Patent Title: Stress-enhanced performance of a FinFET using surface/channel orientations and strained capping layers
- Patent Title (中): 使用表面/通道取向和应变封盖层的FinFET的应力增强性能
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Application No.: US13103677Application Date: 2011-05-09
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Publication No.: US08349668B2Publication Date: 2013-01-08
- Inventor: Victor Moroz , Tsu-Jae King Liu
- Applicant: Victor Moroz , Tsu-Jae King Liu
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Bever, Hoffman & Harms, LLP
- Agent Jeanette S. Harms
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
Different approaches for FinFET performance enhancement based on surface/channel direction and type of strained capping layer are provided. In one relatively simple and inexpensive approach providing a performance boost, a single surface/channel direction orientation and a single strained capping layer can be used for both n-channel FinFETs (nFinFETs) and p-channel FinFETs (pFinFETs). In another approach including more process steps (thereby increasing manufacturing cost) but providing a significantly higher performance boost, different surface/channel direction orientations and different strained capping layers can be used for nFinFETs and pFinFETs.
Public/Granted literature
- US20110212601A1 Stress-Enhanced Performance Of A Finfet Using Surface/Channel Orientations And Strained Capping Layers Public/Granted day:2011-09-01
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