Invention Grant
US08349674B2 Forming borderless contact for transistors in a replacement metal gate process
有权
在替代金属栅极工艺中形成晶体管的无边界接触
- Patent Title: Forming borderless contact for transistors in a replacement metal gate process
- Patent Title (中): 在替代金属栅极工艺中形成晶体管的无边界接触
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Application No.: US13073151Application Date: 2011-03-28
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Publication No.: US08349674B2Publication Date: 2013-01-08
- Inventor: Shom Ponoth , David V. Horak , Charles W. Koburger, III , Chih-Chao Yang
- Applicant: Shom Ponoth , David V. Horak , Charles W. Koburger, III , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Yuanmin Cai
- Main IPC: H01L21/338
- IPC: H01L21/338
Abstract:
Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes creating an opening inside a dielectric layer, the dielectric layer being formed on top of a substrate and the opening exposing a channel region of a transistor in the substrate; depositing a work-function layer lining the opening and covering the channel region; forming a gate conductor covering a first portion of the work-function layer, the first portion of the work-function layer being on top of the channel region; and removing a second portion of the work-function layer, the second portion of the work-function layer surrounding the first portion of the work-function layer, wherein the removal of the second portion of the work-function layer insulates the first portion of the work-function layer from rest of the work-function layer.
Public/Granted literature
- US20120248508A1 FORMING BORDERLESS CONTACT FOR TRANSISTORS IN A REPLACEMENT METAL GATE PROCESS Public/Granted day:2012-10-04
Information query
IPC分类:
