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发明授权
US08349678B2 Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain 有权
具有部分非硅源极/漏极的侧向扩散的金属氧化物半导体晶体管

Laterally diffused metal oxide semiconductor transistor with partially unsilicided source/drain
摘要：
A method of fabricating a laterally diffused metal oxide semiconductor (LDMOS) transistor includes forming a dummy gate over a substrate. A source and a drain are formed over the substrate on opposite sides of the dummy gate. A first silicide is formed on the source. A second silicide is formed on the drain so that an unsilicided region of at least one of the drain or the source is adjacent to the dummy gate. The unsilicided region of the drain provides a resistive region capable of sustaining a voltage load suitable for a high voltage LDMOS application. A replacement gate process is performed on the dummy gate to form a gate.
摘要（中）：

制造横向扩散的金属氧化物半导体（LDMOS）晶体管的方法包括在衬底上形成虚拟栅极。 在虚拟栅极的相对侧上的衬底上形成源极和漏极。 在源上形成第一硅化物。 在漏极上形成第二硅化物，使得至少一个漏极或源极的非硅化区域与虚拟栅极相邻。 漏极的非硅化区域提供能够承受适合于高电压LDMOS应用的电压负载的电阻区域。 在虚拟栅极上执行替换栅极处理以形成栅极。

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