Production method of a capacitor

Invention Grant

US08349683B2 Production method of a capacitor 有权

Title translation: 电容器的制作方法

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Patent Title: Production method of a capacitor
Patent Title (中): 电容器的制作方法
Application No.: US10573495

Application Date: 2004-09-24
Publication No.: US08349683B2

Publication Date: 2013-01-08
Inventor: Kazumi Naito
Applicant: Kazumi Naito
Applicant Address: JP Tokyo
Assignee: Showa Denko K.K.
Current Assignee: Showa Denko K.K.
Current Assignee Address: JP Tokyo
Agency: Sughrue Mion, PLLC
Priority: JP2003-335442 20030926
International Application: PCT/JP2004/014434 WO 20040924
International Announcement: WO2005/031772 WO 20050407
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L29/08 ; H01L35/24 ; H01L51/00

Abstract:

The present invention relates to a method for producing a capacitor comprising, as one electrode, an electric conductor having formed on the surface thereof a dielectric layer and, as the other electrode, a semiconductor layer formed on the electric conductor by energization using the electric conductor as the anode, wherein fine protrusions are formed on the dielectric layer before energization; a capacitor produced by the method thereof having a good capacitance appearance factor and a low ESR; and an electronic circuit and an electronic device using the capacitor.

Abstract(Chinese):

电容器的制造方法技术领域本发明涉及一种电容器的制造方法，其特征在于，具有作为一个电极的表面上形成有电介质层的电导体，作为另一个电极，通过使用所述导电体通电而形成在所述导电体上的半导体层作为阳极，其中在通电之前在电介质层上形成微细突起; 通过其具有良好的电容外观因子和低ESR的方法产生的电容器; 以及使用该电容器的电子电路和电子装置。

Public/Granted literature

US20070002526A1 Production method of a capacitor Public/Granted day:2007-01-04

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）