Invention Grant
US08349684B2 Semiconductor device with high K dielectric control terminal spacer structure
有权
具有高K介质控制端子间隔结构的半导体器件
- Patent Title: Semiconductor device with high K dielectric control terminal spacer structure
- Patent Title (中): 具有高K介质控制端子间隔结构的半导体器件
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Application No.: US12622115Application Date: 2009-11-19
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Publication No.: US08349684B2Publication Date: 2013-01-08
- Inventor: Jin Cai , Amlan Majumdar , Ramachandran Muralidhar , Ghavam G. Shahidi
- Applicant: Jin Cai , Amlan Majumdar , Ramachandran Muralidhar , Ghavam G. Shahidi
- Applicant Address: US TX Austin US NY Armonk
- Assignee: Freescale Semiconductor, Inc.,International Business Machines Corporation
- Current Assignee: Freescale Semiconductor, Inc.,International Business Machines Corporation
- Current Assignee Address: US TX Austin US NY Armonk
- Agent David G. Dolezal
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A semiconductor device including a control terminal sidewall spacer structure made of a high-K dielectric material. The semiconductor device includes a control terminal where the spacer structure is a sidewall spacer structure for the control terminal. The semiconductor device includes current terminal regions located in a substrate. In some examples, the spacer structure has a height that is less than the height of the control terminal. In some examples, the spacer structure includes portions located over the regions of the substrate between the first current terminal region and the second current terminal region.
Public/Granted literature
- US20110117712A1 SEMICONDUCTOR DEVICE WITH HIGH K DIELECTRIC CONTROL TERMINAL SPACER STRUCTURE Public/Granted day:2011-05-19
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