Channel surface technique for fabrication of FinFET devices

Invention Grant

US08349692B2 Channel surface technique for fabrication of FinFET devices 有权

Title translation: 用于制造FinFET器件的通道表面技术

Please log in to see more content

Patent Title: Channel surface technique for fabrication of FinFET devices
Patent Title (中): 用于制造FinFET器件的通道表面技术
Application No.: US13043323

Application Date: 2011-03-08
Publication No.: US08349692B2

Publication Date: 2013-01-08
Inventor: Chung Foong Tan , Eng Huat Toh , Jae Gon Lee , Sanford Chu
Applicant: Chung Foong Tan , Eng Huat Toh , Jae Gon Lee , Sanford Chu
Applicant Address: SG Singapore
Assignee: GlobalFoundries Singapore Pte. Ltd.
Current Assignee: GlobalFoundries Singapore Pte. Ltd.
Current Assignee Address: SG Singapore
Main IPC: H01L21/336
IPC: H01L21/336

Channel surface technique for fabrication of FinFET devices

Abstract:

A FinFET (p-channel) device is formed having a fin structure with sloped or angled sidewalls (e.g., a pyramidal or trapezoidal shaped cross-section shape). When using conventional semiconductor substrates having a (100) surface orientation, the fin structure is formed in a way (groove etching) which results in sloped or angled sidewalls having a (111) surface orientation. This characteristic substantially increases hole mobility as compared to conventional fin structures having vertical sidewalls.

Abstract(Chinese):

FinFET（p沟道）器件形成为具有倾斜或成角度的侧壁（例如，金字塔形或梯形形状的横截面形状）的翅片结构。当使用具有（100）表面取向的常规半导体衬底时，翅片结构以一种（凹槽蚀刻）形成，其导致具有（111）表面取向的倾斜或倾斜的侧壁。与具有垂直侧壁的常规翅片结构相比，该特性显着增加了空穴迁移率。

Public/Granted literature

US20120228676A1 CHANNEL SURFACE TECHNIQUE FOR FABRICATION OF FinFET DEVICES Public/Granted day:2012-09-13

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/334	....制造单极型器件的台阶式工艺
H01L21/335	.....场效应晶体管
H01L21/336	......带有绝缘栅的