Invention Grant
- Patent Title: Asymmetric MIM capacitor for DRAM devices
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Application No.: US13195528Application Date: 2011-08-01
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Publication No.: US08349696B1Publication Date: 2013-01-08
- Inventor: Hanhong Chen , Hiroyuki Ode
- Applicant: Hanhong Chen , Hiroyuki Ode
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A bilayer second electrode for a MIM DRAM capacitor is formed wherein the layer of the electrode that is in contact with the dielectric layer (i.e. bottom layer) has a composition that is resistant to oxidation during subsequent anneal steps and have rutile templating capability. Examples include SnO2 and RuO2. The capacitor stack including the bottom layer is subjected to a PMA treatment to reduce the oxygen vacancies in the dielectric layer and reduce the interface states at the dielectric/second electrode interface. The other component of the bilayer (i.e. top layer) is a high work function, high conductivity metal or conductive metal compound.
Information query
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